論文

• Ichiro Kato, Ryuichi Maruyama, Kazuma Maeda, Hajime Moroda, Ichiro Kato, Masashi Inoue, Hiroyoshi Miyakawa. Detecting cells using non-negative matrix factorization on calcium imaging data, Neural Networks, Vol. 55C, pp. 11-19, July 2014.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Characteristics of Thermally Nitrided Silicon Dioxide Film and Plasma Enhancement, Journal of Electronic Materials, Springer, Vol. 13, No. 6, pp. 913-929, Aug. 1984.
• Ichiro Kato, Takashi Ito, Shnichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2 Films for Thin Gate Insulators, Japanese Journal of Applied Physics. Supplement, The Japan Society of Applied Phisics, Vol. 21-1, pp. 153-158, 1982.
• Takashi Ito, Ichiro Kato, Takao Nozak, Tetsuo Nakamura, Hajime Ishikawa. Plasma enhanced Thermal Nitridation of Silicon, Applied Phisics Letters, American Institute of Physics, Vol. 38, No. 5, pp. 370-372, 1981.

国際会議発表 (査読有り)

• Takashi Ito, Ichiro Kato, Hajime Ishikawa. Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide, MRS Symp. Proc. 38, MRS Symp. Proc. 38, pp. 474-485, 1985.
• Takashi Ito, Ichiro Kato, Tetsuo Nakamura, Hajime Ishikawa. Thermal Nitride Thin Films for VLSI Circuits, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, Proc. of Symp. on Silicon Nitride Thin Insulating Films, ECS, pp. 295-301, 1983.
• Ichiro Kato, Takashi Ito, Tetsuo Nakamura, Hajime Ishikawa. Plasma Nitrided Silicon Dioxide Film for VLSI Gate Dielectrics, Elec. Mat. Conf., Elec. Mat. Conf., Vol. 6, No. 13, pp. 913-929, 1983.
• Ichiro Kato, Takashi Ito, Shinichi Inoue, Tetsuo Nakamura, Hajime Ishikawa. Ammonia Annealed SiO2. Films for Thin Gate Insulators, Ext. Abs. on 13th Conf. on SSDM, Ext. Abs. on 13th Conf. on SSDM, pp. 73-74, 1981.

国際会議発表 (査読なし・不明)

• T. Yasunaga, M. Kobayashi, H. Kato, K. Fujii, M. Yashima, M. Kakihana. Synthesis of a novel oxynitride BaYSi2O5N and its photoluminescence property, 9th International Symposium on Nitrides and Related Materials (ISNT2017) & 5th International Symposium on SiAlONs and Non-oxides (ISSNOX5), Aug. 2017.

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