国際会議発表 (査読有り)

• E. Mranda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown, ESREF2012, [588] E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”, ESREF2012, October, 2012, Cagliari, Italy, 2012.

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