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成田匡志 研究業績一覧 (8件)
論文
国際会議発表 (査読有り)
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Atsushi Turumaki-Fukuchi,
Takayoshi Katase,
Hiromichi Ohta,
Masashi Arita,
Yasuo Takahashi.
Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaOx for Neuromorphic Computing,
Materials Research Meeting 2021,
Dec. 2021.
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Atsushi Tsurumaki-Fukuchi,
Yasuo Takahashi,
Atsushi Tsurumaki-Fukuchi,
Takayoshi Katase,
Hiromichi Ohta,
Masashi Arita,
Yasuo Takahashi.
Nanoscale Probing of Field-Driven Ion Migration in TaOx for Neuromorphic Memristor Applications,
240th ECS Meeting,
Oct. 2021.
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Keiji Tsubaki,
Atsushi Turumaki-Fukuchi,
Yasuo Takahashi,
Takayoshi Katase,
Toshio Kamiya,
Masashi Arita.
Fast and Reliable Resistance Switching in Ca2RuO4 Thin Films Driven by the Current-Induced Phase Transitions,
2021 International Conference on Solid State Devices and Materials (SSDM),
Sept. 2021.
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Keiji Tsubaki,
Tenki Ishida,
Yasuo Takahashi,
Takayoshi Katase,
Toshio Kamiya,
Atsushi Tsurumaki-Fukuchi,
Masashi Arita.
Current-driven metal-insulator transition observed in epitaxial thin films of the Mott Semiconductor Ca2RuO4,
The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12),
July 2021.
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Atsushi Tsurumaki-Fukuchi,
Takayoshi Katase,
Hiromichi Ohta,
Masashi Arita,
Yasuo Takahashi.
Probe Microscopy analysis of neuromorphic resistive memory functions of amorphous oxide semiconductors,
The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12),
July 2021.
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Atsushi Tsurumaki-Fukuchi,
Keiji Tusubaki,
Takayoshi Katase,
Toshio Kamiya,
Masashi Arita,
Yasuo Takahashi.
Observation of Field-Induced Resistive Phase Transition in Ca2RuO4 Thin Films,
26th International Workshop on Oxide Electronics (iWOE 26),
Oct. 2019.
国際会議発表 (査読なし・不明)
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