国際会議発表 (査読有り)

• K. Fushinobu, Y. Yamamoto, T. Hatakeyama. Scaling consideration on local hotspot for Si MOSFETs - For device length scale typically larger than 100 nm, ITherm 2010, Proc. ITherm 2010, No. 008, June 2010.
• Yasufumi Yamamoto, T. Hatakeyama, K. Fushinobu, K. Okazaki. Heat generation characteristics in Si MOSFETs for the device-level thermal management - Effect of the device scaling and transport properties, 7th CHE Conference, Proc. 7th CHE Conference, CHE2009-23, Sept. 2009.
• Yasufumi Yamamoto, Tomoyuki Hatakeyama, Kazuyoshi Fushinobu, Ken Okazaki. Electro-Thermal Analysis for Compact Heat Generation Model of Si MOSFET, The Seventh JSME-KSME Thermal and Fluids Engineering Conference (TFEC2008), CD-ROM, F134, Oct. 2008.

国内会議発表 (査読なし・不明)

• 山本泰史, 畠山友行, 伏信一慶, 岡崎健. Si MOSFETにおけるコンパクト発熱モデルのための熱・電気連成解析, 第４５回日本伝熱シンポジウム, 第４５回日本伝熱シンポジウム講演論文集, 社団法人日本伝熱学会, Vol. 2+3, pp. 683-684, May 2008.

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