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Publication List - Toru Kanazawa 2019 (6 / 154 entries)
Journal Paper
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Y. Miyamoto,
T. Kanazawa,
N. Kise,
H. Kinoshita,
K. Ohsawa.
Regrown Source/Drain in InGaAs Multi-Gate MOSFETs,
J. Crystal Growth,
vol. 522,
(2019)11-15,
Sept. 2019.
Official location
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W Zhang,
T. Kanazawa,
Y. Miyamoto.
Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunnelling field-effect transistor by UV-O3 treatment,
Apl. Phys. Exp,
vol. 12,
no. 6,
065005 (2019),
May 2019.
Official location
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W Zhang,
S. Netsu,
T. Kanazawa,
T. Amemiya,
Y. Miyamoto.
Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor,
Jpn. J. Appl. Phys,
58, SBBH02 (2019),
Jan. 2019.
International Conference (Reviewed)
Domestic Conference (Not reviewed / Unknown)
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Wenlun Zhang,
Toru Kanazawa,
Minoru Kitamura,
YASUYUKI MIYAMOTO.
UV-O3表面酸化によるHfS2 MOSFETの性能改善,
第66回応用物理学会春季学術講演会,
11p-W521-4,
Mar. 2019.
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Minoru Kitamura,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
HSQを用いたInGaAsナノシート構造作製法評価,
第66回応用物理学会春季学術講演会,
11a-M121-11,
Mar. 2019.
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