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Publication List - Ibrahim Imad ABDO 2019 (6 / 37 entries)
Journal Paper
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Korkut Kaan Tokgoz,
Ibrahim Abdo,
Takuya Fujimura,
Jian Pang,
Yoichi Kawano,
Taisuke Iwai,
Akifumi Kasamatsu,
Issei Watanabe,
Kenichi Okada.
A 273-301-GHz Amplifier with 21-dB Peak Gain in 65-nm Standard Bulk CMOS,
IEEE Microwave and Wireless Components Letters,
Vol. 29,
No. 5,
pp. 342-344,
May 2019.
International Conference (Reviewed)
International Conference (Not reviewed / Unknown)
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Hiroshi Hamada,
Takuya Tsutsumi,
Hiroki Sugiyama,
Hideaki Matsuzaki,
Ho-Jin Song,
Go Itami,
Takuya Fujimura,
Ibrahim Abdo,
Kenichi Okada,
Hideyuki Nosaka.
Millimeter-wave InP Device Technologies for Ultra-high Speed Wireless Communications toward Beyond 5G,
IEEE International Electron Devices Meeting (IEDM),
Dec. 2019.
Domestic Conference (Not reviewed / Unknown)
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Ibrahim Abdo,
Korkut Kaan Tokgoz,
藤村 拓弥,
Jian Pang,
白根 篤史,
岡田 健一.
CMOS Transistor Layout Optimization for Sub-THz Amplifier Design,
電子情報通信学会 ソサイエティ大会,
Sept. 2019.
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Chun Wang,
Ibrahim Abdo,
白根 篤史,
岡田 健一.
A 22.7dB Three-stage D-band Power Amplifier in 65nm CMOS,
電子情報通信学会 ソサイエティ大会,
Sept. 2019.
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Hiroshi Hamada,
Takuya Fujimura,
Ibrahim Imad ABDO,
Kenichi Okada,
Hideyuki Nosaka.
80-nm InP-HEMTを用いた基本波ミキサ構成トランシーバによる300GHz帯100Gb/s無線伝送,
電子情報通信学会 総合大会,
C-2-1,
Mar. 2019.
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