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吉野淳二 2001年 研究業績一覧 (11件 / 68件)
論文
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T. Honda,
K. Hara,
J. Yoshino,
H. Kukimoto.
Growth of CuGaS2 based chalcopyrite compounds and their heterostructure by MOVPE,
Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1,
pp. 98-101,
2001.
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A. Nagashima,
M. Tajima,
J. Yoshino.
Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs,
28th International symposium on compound semiconductors, MoP22, Abstracts,
pp. 34,
2001.
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K. Yamamoto,
A. Nagashima,
J. Yoshino.
MBE growth of (Ga,Mn)As with high Mn-content,
20th Electronic materials symposium , Extended abstracts,
pp. 111-112,
2001.
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M. Tajima,
A. Nagashima,
J. Yoshino.
STM studies on reentrant RHEED oscillation observed during low temperature MBE growth of GaAs,
20th Electronic materials symposium , Extended abstracts,
pp. 127-128,
2001.
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T. Honda,
K. Hara,
J. Yoshino,
H. Kukimoto.
CuGaS_2-based light emitting diode grown by MOVPE,
13th International conference on crystal growth, Abstracts, 03a-K31-11,
pp. 383,
2001.
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M. Tajima,
A. Nagashima,
J. Yoshino.
STM study on re-entrant behaviors observed dduring MBE growth of GaAs,
13th International conference on crystal growth, Abstracts, 03a-K31-11,
pp. 206,
2001.
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D. Okazawa,
K. Yamamoto,
A. Nagashima,
J. Yoshino.
MBE growth and properties of 3d transition metal-doped GaAs,
Physica E,
Vol. 10,
No. 1-3,
pp. 229-232,
2001.
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Y. Satoh,
D. Okazawa,
A. Nagashima,
J. Yoshino.
Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs,
Physica E,
Vol. 10,
No. 1-3,
pp. 196-200,
2001.
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M. Tazima,
K. Yamamoto,
D. Okazawa,
A. Nagashima,
J. Yoshino.
Effect of Mn on the low temperature growth of GaAs and GaMnAs,
Physica E,
Vol. 10,
No. 1-3,
pp. 186-191,
2001.
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J. Yoshino.
III-V based diluted magnetic semiconductors -Promising properties and future prospects-,
Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1,
pp. 312-317,
2001.
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AYATO NAGASHIMA,
J. Yoshino.
Structural analysis of GaAs(001)-c(4x4) with LEED IV technique,
Surface Science,
Vol. 493,
No. 1-3,
pp. 227-231,
2001.
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