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藤澤利正 2008年 研究業績一覧 (14件 / 168件)
論文
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Liu, H. W.,
Fujisawa, T.,
Inokawa, H.,
Ono, Y.,
Fujiwara, A.,
Hirayama, Y.,
Toshimasa Fujisawa.
A gate-defined silicon quantum dot molecule,
Applied Physics Letters,
Vol. 92,
No. 22,
2008.
公式リンク
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Grove-Rasmussen, K.,
Jorgensen, H. I.,
Hayashi, T.,
Lindelof, P. E.,
Fujisawa, T.,
Toshimasa Fujisawa.
A triple quantum dot in a single-wall carbon nanotube,
Nano Letters,
Vol. 8,
No. 4,
pp. 1055-1060,
2008.
公式リンク
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Perraud, S.,
Kanisawa, K.,
Wang, Z. Z.,
Fujisawa, T.,
Toshimasa Fujisawa.
Bound states induced by a single donor in a semiconductor quantum well: A scanning tunneling spectroscopy study,
Physica E-Low-Dimensional Systems & Nanostructures,
Vol. 40,
No. 5,
pp. 1418-1420,
2008.
公式リンク
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Ota, T.,
Kumada, N.,
Yusa, G.,
Miyashita, S.,
Fujisawa, T.,
Hirayama, Y.,
Toshimasa Fujisawa.
Coherence time of nuclear spins in GaAs quantum well probed by submicron-scale all-electrical nuclear magnetic resonance device,
Japanese Journal of Applied Physics,
Vol. 47,
No. 4,
pp. 3115-3117,
2008.
公式リンク
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Perraud, S.,
Kanisawa, K.,
Wang, Z. Z.,
Fujisawa, T.,
Toshimasa Fujisawa.
Direct measurement of the binding energy and bohr radius of a single hydrogenic defect in a semiconductor quantum well,
Physical Review Letters,
Vol. 100,
No. 5,
2008.
公式リンク
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Kumada, N.,
Kamada, T.,
Miyashita, S.,
Hirayama, Y.,
Fujisawa, T.,
Toshimasa Fujisawa.
Electric field induced nuclear spin resonance mediated by oscillating electron spin domains in GaAs-based semiconductors,
Physical Review Letters,
Vol. 101,
No. 13,
2008.
公式リンク
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Kim, N. Y.,
Lai, C. W.,
Utsunomiya, S.,
Roumpos, G.,
Fraser, M.,
Deng, H.,
Byrnes, T.,
Recher, P.,
Kumada, N.,
Fujisawa, T.,
Yamamoto, Y.,
Toshimasa Fujisawa.
GaAs microcavity exciton-polaritons in a trap,
Physica Status Solidi B-Basic Solid State Physics,
Vol. 245,
No. 6,
pp. 1076-1080,
2008.
公式リンク
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Melnikov, D. V.,
Fujisawa, T.,
Austing, D. G.,
Tarucha, S.,
Leburton, J. P.,
Toshimasa Fujisawa.
Many-body excitations in the tunneling current spectra of a few-electron quantum dot,
Physical Review B,
Vol. 77,
No. 16,
2008.
公式リンク
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Utsunomiya, S.,
Tian, L.,
Roumpos, G.,
Lai, C. W.,
Kumada, N.,
Fujisawa, T.,
Kuwata-Gonokami, M.,
Loffler, A.,
Hofling, S.,
Forchel, A.,
Yamamoto, Y.,
Toshimasa Fujisawa.
Observation of Bogoliubov excitations in exciton-polariton condensates,
Nature Physics,
Vol. 4,
No. 9,
pp. 700-705,
2008.
公式リンク
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Liu, H. W.,
Fujisawa, T.,
Ono, Y.,
Inokawa, H.,
Fujiwara, A.,
Takashina, K.,
Hirayama, Y.,
Toshimasa Fujisawa.
Pauli-spin-blockade transport through a silicon double quantum dot,
Physical Review B,
Vol. 77,
No. 7,
2008.
公式リンク
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Suzuki, K.,
Kanisawa, K.,
Perraud, S.,
Fujisawa, T.,
Toshimasa Fujisawa.
Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well,
Applied Surface Science,
Vol. 254,
No. 23,
pp. 7889-7892,
2008.
公式リンク
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Fujisawa, T.,
Shinkai, G.,
Hayashi, T.,
Toshimasa Fujisawa.
Spin-conserved single-electron transport between Zeeman sublevels in a few-electron quantum dot,
Japanese Journal of Applied Physics,
Vol. 47,
No. 4,
pp. 3107-3110,
2008.
公式リンク
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Giudici, P.,
Muraki, K.,
Kumada, N.,
Hirayama, Y.,
Fujisawa, T.,
Toshimasa Fujisawa.
Spin-dependent phase diagram of the nu(T)=1 bilayer electron system,
Physical Review Letters,
Vol. 100,
No. 10,
2008.
公式リンク
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Hayashi, T.,
Fujisawa, T.,
Toshimasa Fujisawa.
Voltage-pulse-induced electromigration,
Nanotechnology,
Vol. 19,
No. 14,
2008.
公式リンク
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