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井手啓介 2012年 研究業績一覧 (5件 / 201件)
論文
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Mutsumi Kimura,
Takayuki Hasegawa,
Keisuke Ide,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing,
IEEE Electron Dev. Lett.,
Vol. 33,
No. 3,
pp. 384-386,
Feb. 2012.
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Keisuke Ide,
Yutomo Kikuchi,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors,
Thin Solid Films,
Vol. 520,
pp. 3787-3790,
2012.
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Keisuke Ide,
Kenji Nomura,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono.
Structural relaxation in amorphous oxide semiconductor,
J. Appl. Phys,
Vol. 111,
No. 073513,
pp. 1 - 6,
2012.
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Mutsumi Kimura,
Takayuki Hasegawa,
Keisuke Ide,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing,
Solid-State Electronics,
Vol. 75,
pp. 74-76,
2012.
国際会議発表 (査読有り)
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Hasegwa, T.,
Kimura, M.,
Keisuke Ide,
Nomura, K.,
Kamiya, T.,
HIDEO HOSONO.
Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering,
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012,
pp. 41-42,
2012.
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