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角谷直哉 2011年 研究業績一覧 (3件 / 7件)
論文
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N. Kadotani,
T. Ohashi,
T. Takahashi,
S. Oda,
K. Uchida.
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors,
Japanese Journal of Applied Physics,
Vol. 50,
pp. 094101 (7 pages),
Sept. 2011.
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N. Kadotani,
T. Takahashi,
T. Ohashi,
S. Oda,
K. Uchida.
Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm,
Journal of Applied Physics,
Vol. 110,
pp. 034502. (7 pages),
2011.
国内会議発表 (査読なし・不明)
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