Journal Paper

• Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata, Hiroshi Funakubo. High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films, Appl. Phys. Lett., Vol. 125, pp. 032904, July 2024.

Domestic Conference (Not reviewed / Unknown)

• Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, 上岡義弘, 召田雅実, HIROSHI FUNAKUBO. MgSiN2薄膜の作製と特性評価, 第71回応用物理学会春季学術講演会, Mar. 2024.
• Nana SUN, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Soshun Doko, Hiroshi Funakubo. High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films, 第71回応用物理学会春季学術講演会, Mar. 2024.
• Reika Ota, Shinnosuke Yasuoka, 中村美子, Kazuki Okamoto, 原浩之, 正能大起, 上岡義弘, 召田雅実, HIROSHI FUNAKUBO. Ga添加によるAlNへのSc固溶量の増加とその強誘電性および圧電性への影響, 第71回応用物理学会春季学術講演会, Mar. 2024.
• 上原雅人, 平田研二, 中村美子, Shinnosuke Yasuoka, スリ アユ アンガライニ, Kazuki Okamoto, 山田浩志, HIROSHI FUNAKUBO, 秋山守人. スパッタリング法で作製した高Sc濃度ScGaN膜の圧電・強誘電特性, 第71回応用物理学会春季学術講演会, Mar. 2024.
• HIROSHI FUNAKUBO, Nachi Chaya, Koji Hirai, Shinnosuke Yasuoka, Kazuki Okamoto, 山岡和希子, 井上ゆか梨. スパッタリング法によるHfO2-CeO2強誘電体薄膜のYSZ基板上への非加熱合成, 第62回セラミックス基礎科学討論会, Jan. 2024.
• Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo. Effect of gas annealing on the ferroelectric property of (Al0.8Sc0.2)N thin film, 第62回セラミックス基礎科学討論会, Jan. 2024.
• Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, HIROSHI FUNAKUBO. スパッタリング法によるAlN-(Mg, Si)N膜の作製とその特性評価, 第62回セラミックス基礎科学討論会, Jan. 2024.
• 髙橋良, Yoshitaka Ehara, 竹尾勇司, 濱嵜容丞, 澤井眞也, 平田靖透, 宮内良広, Shintaro Yasui, Shinnosuke Yasuoka, HIROSHI FUNAKUBO, ken nishida. チューナブルデバイス応用へ向けたBa(Zr,Ti)O3膜の作製と評価, 第62回セラミックス基礎科学討論会, Jan. 2024.

Degree

• Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2024/03/26,   
• Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2024/03/26,   
• Study on Crystal Structure and Ferroelectricity in Wurtzite (Al,Sc)N Thin Films Deposited by Sputtering Method,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2024/03/26,   
• Study on crystal structure and ferroelectricity in wurtzite (Al,Sc)N thin films deposited by sputtering method,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2024/03/26, 

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