論文

• Si-Meng Chen, Sung Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Edward Yi Chang, Kuniyuki KAKUSHIMA. GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation, Japanese Journal of Applied Physics, Volume 61, June 2022.

国際会議発表 (査読有り)

• Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation, International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-, Nov. 2021.

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