論文

• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics, Vol. 49, 051301, May 2010.
• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Yasumasa Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics, 49, 051301, May 2010.
• KAZUO TSUTSUI, T Matsuda, M Watanabe, Cheng-Guo Jin, 佐々木雄一朗, Bunji Mizuno, E Ikenaga, Kuniyuki KAKUSHIMA, Ahmet Parhat, T Maruizumi, Hiroshi Nohira, takeo hattori, HIROSHI IWAI. Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements, Journal of Applied Physics, Vol. 104, 093709, 2008.

国際会議発表 (査読有り)

• KAZUO TSUTSUI, Masaoki Tanaka, Norifumi Hoshino, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, T. Muro, T. Kinoshita, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Activation and Deactivation of Impurities in Shallow Junctions, ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010, Nov. 2010.
• KAZUO TSUTSUI, Norifumi Hoshino, Yasumasa Nakagawa, Masaoki Tanaka, Hiroshi Nohira, Kuniyuki KAKUSHIMA, Ahmet Parhat, 佐々木雄一朗, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• Akira Uedono, KAZUO TSUTSUI, Shoji Ishibashi, Hiromichi Watanabe, Shoji Kubota, Kazuki Tenjinbayashi, Yasumasa Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Type Defects in Ultra-Shallow Junctions Fabricated Using Plasma Doping Studied by Positron Annihilation, IEEE IWJT 2010 Extended Abstracts 2010 International Workshop on Junction Technology, May 2010.
• A. Uedono, KAZUO TSUTSUI, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, Bunji Mizuno, takeo hattori, HIROSHI IWAI. Vacancy-Boron Complexes in Plasama Immersion lon-lmplanted Si Probed by a Monoenergetic Positron Beam, Japanese Journal of Applied Physics 49, 051301, May 2010.
• B. Mizuno, Y. Sasaki, C. G. Jin, K. Okashita, K. Nakamoto, T. Kitaoka, K. Tsutsui, H. A. Sauddin, H. Iwai. Production-worthy approach of Plasma Doping (PD), The 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Oct. 2008.
• Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Parhat Ahmet, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai.. Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique, The 8th International Workshop on Junction Technology (IWJT2008), May 2008.
• H. Sauddin, Y. Sasaki, H. Ito, B. Mizuno, P. Ahmet, K. Kakushima, N. Sugii, K. Tsutsui, H. Iwai. Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping, 2006 Joint International Meeting of ECS, Oct. 2006.
• Y. Sasaki, H. Ito, K. Okashita, H. Tamura, C. G. Jin, B. Mizuno, T. Okumura, I. Aiba, Y. Fukagawa, H. Sauddin, K. Tsutsui, H. Iwai. Production-worthy USJ formation by self-regulatory plasma doping method, IIT2006, 2006.
• Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohmi, H. Iwai. Gas Phase Doping at Room Temperature, 3rd International Workshop on Junction Technology (IWJT2002), Dec. 2002.
• Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohmi, H. Iwai. Helicon Wave Plasma Doping System, 3rd International Workshop on Junction Technology (IWJT2002), Dec. 2002.

国内会議発表 (査読なし・不明)

• 星野憲文, 中川恭成, 野平博司, 室 隆桂之, 加藤 有香子, 甲斐隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 木下 豊彦, 筒井一生, 服部健雄, 岩井洋. 光電子分光によるSi中Asの化学結合状態評価, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 883, Mar. 2009.
• 中川恭成, 野平博司, 酒井一憲, 横田 知之, 甲斐 隆行, 金成国, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 光電子分光によるSi中Asの活性化状態の深さ方向分布評価, 秋季第69回応用物理学会学術講演会, 応用物理学会, 応用物理学会, No. 2, pp. 738, Sept. 2008.
• 酒井一憲, 中川恭成, 横田知之, 金成国, 岡下勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野文二, 服部健雄, 筒井一生, 岩井洋. 3次元Fin構造中不純物プロファイリングのための反復犠牲酸化エッチング, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 749, Sept. 2008.
• 酒井一憲, 渡邉将光, 中川恭成, 金 成国, 岡下 勝己, 佐々木雄一朗, パールハットアヘメト, 角嶋邦之, 水野 文二, 服部健雄, 筒井一生, 岩井洋. 極浅接合プロファイリングのための反復犠牲酸化エッチング技術, 春季第55回応用物理学会学術講演会, 春季第55回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 900, Mar. 2008.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]