国際会議発表 (査読有り)

• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori1, Hiroshi Iwai. Analysis of Chemical Bonding States of Boron Doped in Si Fin Structures: Selective Observation on Top Surfaces and Sidewalls, 12th Int. Workshop on Junction Technology (IWJT2012), May 2012.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• Jun Kanehara, Youhei Miyata, Hiroshi Nohira, Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita, Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai. Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.
• K. Kakushima, J. Kanehara, Y. Izumi, T. Muro, T. Kinoshita, P. Ahmet, K. Tsutsui, T. Hattori, H. Iwai. Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy, 2011 Int. Conf. on Solid State Devices and Materials (SSDM 2011), Sept. 2011.

国際会議発表 (査読なし・不明)

• Kouhei Akita, Jun Kanehara, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. [517] Y. Miyata, K. Akita, J. Kanehara, H. Nohira, Y. Izumi, T. Muro, T. Kinoshita, P. Analysis of Boron Doped in Si Fin Structure by Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Jun Kanehara, Yusuke Takei, Youhei Miyata, Hiroshi Nohira, Y. Izumi, TAKAYUKI MURO, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Depth Profiling of As with Various Chemical Bonding States Doped in Si Shallow Junction by Using Soft X-ray Photoelectron Spectroscopy, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• Youhei Miyata, Jun Kanehara, Hiroshi Nohira, Y. Izumi, T. Muro, 木下豊彦, パールハットアヘメト, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, takeo hattori, HIROSHI IWAI. Soft X-ray Photoelectron Spectroscopy Study of Boron Doped on Top Surfaces and Sidewalls of Si Fin Structures, 2012 12th International Workshop on Junction Technology(IWJT2012), 2012.
• Kuniyuki KAKUSHIMA, Jun Kanehara, takeo hattori, KAZUO TSUTSUI, HIROSHI IWAI. Boron depth profile of a plasma immersed substrate by XPS analysis, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.

国内会議発表 (査読なし・不明)

• 角嶋邦之, 金原潤, 筒井一生, 服部健雄, 岩井洋. 高濃度ボロンドープ飼料の角度分解X線光電子分光による濃度分布解析, 第72回応用物理学会学術講演会, 2011.
• 金原潤, 宮田陽平, 秋田洸平, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, パールハットアヘメト, 角嶋邦之, 服部健雄, 岩井洋. Si中に極浅ドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布, 第72回応用物理学会学術講演会, 2011.
• 宮田陽平, 金原潤, 難波覚, 三角元力, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, 角嶋邦之, パールハットアヘメト, 服部健雄, 岩井洋. 軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析, 第72回応用物理学会学術講演会, 2011.
• 田中正興, 金原潤, 宮田陽平, 角嶋邦之, パールハットアヘメト, 室隆桂之, 木下豊彦, 野平博司, 筒井一生, 室田 淳一, 服部健雄, 岩井洋. Siエピタキシャル層にドープされたボロンの軟X線光電子分光, 第７１回応用物理学会学術講演会, Sept. 2010.

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