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Publication List - YASUYUKI MIYAMOTO 2003 (11 / 477 entries)
Journal Paper
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Yasuyuki Miyamoto,
Ren Yamamoto,
Hiroshi Maeda,
Katsuhiko Takeuchi,
Nobuya Machida,
Lars-Erik Wernersson,
Kazuhito Furuya.
InP Hot Electron Transistors with a Buried Metal Gate,
Jpn. J. Appl. Phys.,
Vol. 42,
No. 12,
pp. 7221,
2003.
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K. Furuya,
Y. Ninomiya,
Y. Miyamoto.
Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors,
The 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors,
Vol. Th11.17,
2003.
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K. Takeuchi,
H. Maeda,
R. Makagawa,
Y. Miyamoto,
K. Furuya.
InP hot electron transistors using modulation of gate electrodes,
The 2003 International Conference on Solid State Devices and Materials,
Vol. E-7-3,
2003.
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K. Sasao,
Y. Azuma,
N. Kaneda,
E. Hase,
Y. Miyamoto,
Y. Majima.
Observation of current modulation in SAM-FET fabricated by an air-bridge structure,
The 2003 International Conference on Solid State Devices and Materials,
Vol. P7-5,
2003.
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K.Yokoyama,
Y.Miyamoto,
T.Morita,
T.Arai,
K.Matsuda,
K.Furuya.
Wet etching for self-aligned 0.1-um-wide emitter in InP/InGaAs HBT,
Topical Workshop on Heterostructure Microelectronics,
Vol. W-11,
2003.
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Y. Miyamoto,
K. Sasao,
Y. Azuma,
N. Kaneda,
Y. Majima.
Small Au/SAM/Au junctions by EB lithography,
Photonic West,
4999-37,
2003.
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田中剛,
徳留功一,
宮本恭幸.
低酸素MOVPE材料を用いたAlInAs,InPとAlInAs/InP HEMT構造の成長,
第50回応用物理学会関係連合講演会,
Vol. 28p-YA-3,
2003.
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Y. Miyamoto,
Y. Tohmori.
Activities of Indium Phosphide in Japan,
GaAs Mantech,
Vol. 11-1,
2003.
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Tsuyoshi Tanaka,
Kohichi Tokudome,
Yasuyuki Miyamoto.
Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer,
Jpn. J. Appl. Phys.,
Vol. 42,
No. 8B,
pp. L993,
2003.
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M. Yoshizawa,
S. Moriya,
H. Nakano,
T. Morita,
T. Kitagawa,
Y. Miyamoto.
The Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography,
2003 International Microprocesses and Nanotechnology Conference,
Vol. 30p-6-15,
2003.
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Keigo Yokoyama,
Koji Matuda,
Toshihiro Nonaka,
Yasuyuki Miyamoto,
Kazuhito Furuya.
Fabrication of GaInAs/InP heterojunction bipolar transistors with a single tungsten wire as collector electrode,
Jpn. J. Appl. Phys.,
Vol. 42,
No. 12B,
pp. L1501,
2003.
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