Journal Paper

• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Sougmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Carrier generation and compensation mechanism in La2SnO2S3, J. Mater. Chem. C, Vol. 12, pp. 12015, July 2024.
• Xinyi He, Tatsuya Cho, Takayoshi Katase, Kota Hanzawa, Suguru Kitani, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Wide-Gap p-Type Layered Oxychalcogenides AE2CuInO3Ch (AE: Alkaline Earth; Ch: Chalcogen): Unusually Low Residual Carrier Concentration and Green-to-Red Emission, CHEMISTRY OF MATERIALS, 36, June 2024.
• Chihiro Yamamoto, Xinyi He, Kota Hanzawa, Takayoshi Katase, Masato Sasase, Jun-ichi Yamaura, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon drag thermopower persisting over 200 K in FeSb2 thin film on SrTiO3 single crystal, APPLIED PHYSICS LETTERS, May 2024.

International Conference (Reviewed)

• eruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Point Defects and Self-Trapped Electrons in La2SnO2S3, The Fourteenth International Conference on the Science and Technology for Advanced Ceramics (STAC14), Oct. 2024.
• Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba. Elucidation of Carrier Generation and Compensation Mechanism in La2SnO2S3, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.

Patent

• Fumiyasu Oba, hidenori hiramatsu, Tomoya Gake, Kota Hanzawa. ４元系酸カルコゲン化物および電子素子. Patent. Published. 国立大学法人東京工業大学. 2022/12/22. 特願2022-205476. 2024/07/05. 特開2024-091629. 2024.

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