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ZHANGRUIXIAN 2023年 研究業績一覧 (5件 / 8件)
論文
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory,
IEEE Transactions on Magnetics,
Vol. 59,
No. 11,
pp. 3400905,
May 2023.
国際会議発表 (査読有り)
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM,
The 8th International Conference on Applied & Engineering Physics (CAEP-8),
Oct. 2023.
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Zhang Ruixian,
Takanori Shirokura,
Tuo Fan,
Pham Nam Hai.
Fabrication and evaluation of fully sputtered topological insulator/perpendicularly magnetized CoFeB/MgO multilayers for SOT-MRAM application,
Intermag 2023,
May 2023.
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory,
Intermag 2023,
May 2023.
国内会議発表 (査読なし・不明)
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