A study on AlGaN/GaN HEMT gate stacks for threshold voltage control and leakage current suppression | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	A study on AlGaN/GaN HEMT gate stacks for threshold voltage control and leakage current suppression

Author

Japanese:	陳江寧.
English:	Jiangning Chen.

Type

Type:	Thesis (Ph.D.)
Country:	Japan

Language

English

Organization name

Tokyo Institute of Technology

Report number

甲第10270号

Conferred date

2016/06/30

Judge

File

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