Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2

Publication Information

Title

Japanese:
English:	Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2

Author

Japanese:	S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, 大橋匠, 松浦賢太朗, H. Machida, M. Ishikawa, H. Sudoh, 若林整, 小椋厚志.
English:	S. Ishihara, Y. Hibino, N. Sawamoto, K. Suda, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, A. Ogura.

Language

English

Journal/Book name

Japanese:
English:	Japan Journal of Applied Physics

Volume, Number, Page

Vol. 55

Published date

2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: