Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

Publication Information

Title

Japanese:	Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET
English:	Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

Author

Japanese:	清水淳一, 大橋匠, 松浦賢太朗, 宗田伊理也, 角嶋邦之, 筒井一生, N. Ikarashi, 若林整.
English:	J. Shimizu, T. Ohashi, K. Matsuura, I. Muneta, K. Kakushima, K. Tsutsui, N. Ikarashi, H. Wakabayashi.

Language

English

Journal/Book name

Japanese:	2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
English:	2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)

Volume, Number, Page

pp. 222-223

Published date

June 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	IEEE Electron Device Technology and Manufacturing Conference (EDTM)

Conference site

Japanese:	富山
English:	Toyama

Official URL

DOI