Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration

Publication Information

Title

Japanese:	Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration
English:	Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration

Author

Japanese:	松浦賢太朗, 清水淳一, M. Toyama, 大橋匠, 宗田伊理也, S. Ishihara, 角嶋邦之, 筒井一生, 小椋厚志, 若林整.
English:	K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi.

Language

English

Journal/Book name

Japanese:	IEEE Journal of the Electron Devices Society
English:	IEEE Journal of the Electron Devices Society

Volume, Number, Page

Vol. 6 pp. 1251 - 1257

Published date

Nov. 23, 2018

Publisher

Japanese:
English:	IEEE

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI