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Title
Japanese: 
English:Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate 
Author
Japanese: 松浦 賢太朗, 清水 淳一, 外山 真矢人, 大橋 匠, 宗田 伊理也, S. Ishihara, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整.  
English: K. Matsuura, J. Shimizu, M. Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi.  
Language English 
Journal/Book name
Japanese: 
English:2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 
Volume, Number, Page         pp. 104-106
Published date Mar. 2018 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) 
Conference site
Japanese: 
English:Kobe 
DOI https://doi.org/10.1109/EDTM.2018.8421491

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