Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O

論文・著書情報

タイトル

和文:	Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O
英文:	Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O

著者

和文:	Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya.
英文:	Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya.

言語

English

掲載誌/書名

和文:
英文:

巻, 号, ページ

出版年月

2018年9月30日

出版者

和文:
英文:

会議名称

和文:	Americas international Meeting on Electrochemistry and Solid state science (AiMES)
英文:	Americas international Meeting on Electrochemistry and Solid state science (AiMES)

開催地

和文:	Cancun
英文:	Cancun