Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

論文・著書情報

タイトル

和文:
英文:	Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

著者

和文:	渡辺正裕, Naoyuki Shigyo, 星井拓也, Kazuyoshi Furukawa, 角嶋邦之, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, 宗田伊理也, 若林整, 中島昭, Shin-ichi Nishizawa, 筒井一生, Toshiro Hiramoto, 大橋弘通, 岩井洋.
英文:	Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai.

言語

English

掲載誌/書名

和文:
英文:	Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)

巻, 号, ページ

pp. 217-219

出版年月

2021年4月8日

出版者

和文:
英文:

会議名称

和文:	IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)
英文:

開催地

和文:
英文:	Chengdu