|
Publication List - Takuya Hoshi (3 entries)
Journal Paper
-
Y. Ito,
S. Tamai,
T. Hoshi,
T. Gotow,
Y. Miyamoto.
Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers,
JPN. J. APPL. PHYS.,
vol. 62,
no. SC,
SC1048,
Feb. 2023.
-
Manabu Mitsuhara,
Takahiro Gotow,
Takuya Hoshi,
Hiroki Sugiyama,
Mitsuru Takenaka,
Shinichi Takagi.
Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates,
Journal of Crystal Growth,
555,
125970,
Nov. 2020.
International Conference (Reviewed)
[ Save as BibTeX ]
[ Paper, Presentations, Books, Others, Degrees: Save as CSV
]
[ Patents: Save as CSV
]
|