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仲順大吾 研究業績一覧 (3件)
- 2024
- 2023
- 2022
- 2021
- 2020
- 全件表示
国際会議発表 (査読有り)
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D. Nakajun,
N. Kanai,
R. F. T. Fathulah,
H. Fujita,
E. Yagyu,
Y. Miyamoto.
Multi-level inverter toward GaN HEMT monolithic integrated circuit,
Les Eastman Conference 2018,
IIIB-5,
Aug. 2018.
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D. Nakajun,
R. F. T. Fathulah,
H. Fujita,
E. Yagyu,
Y. Miyamoto.
Multi-level inverter by GaN HEMT on semi-insulating substrate,
12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017),
4-4,
Aug. 2017.
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Y. Miyamoto,
D. Nakajun,
R. F. T. Fathulah,
H. Fujita,
E. Yagyu.
High speed GaN HEMT for power electronics (Invited),
12th International Conference on Nitride Semiconductor (ICNS),
C5.1,
July 2017.
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