仲順大吾研究業績一覧 | T2R2 東京科学大学リサーチリポジトリ

仲順大吾研究業績一覧 (3件)

D. Nakajun, N. Kanai, R. F. T. Fathulah, H. Fujita, E. Yagyu, Y. Miyamoto. Multi-level inverter toward GaN HEMT monolithic integrated circuit, Les Eastman Conference 2018, IIIB-5, Aug. 2018.
D. Nakajun, R. F. T. Fathulah, H. Fujita, E. Yagyu, Y. Miyamoto. Multi-level inverter by GaN HEMT on semi-insulating substrate, 12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017), 4-4, Aug. 2017.
Y. Miyamoto, D. Nakajun, R. F. T. Fathulah, H. Fujita, E. Yagyu. High speed GaN HEMT for power electronics (Invited), 12th International Conference on Nitride Semiconductor (ICNS), C5.1, July 2017.