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耒山大祐 研究業績一覧 (2件)
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国際会議発表 (査読有り)
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D. Kitayama,
T. Koyanagi,
K. Kakushima,
P. Ahmet,
K. Tsutsui,
A. Nishiyama,
N. Sugii,
K. Natori,
T. Hattori,
H. Iwai.
TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT,
218th ECS Meeting,
Oct. 2010.
国際会議発表 (査読なし・不明)
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Daisuke Kitayama,
Kuniyuki KAKUSHIMA,
パールハットアヘメト,
Akira Nishiyama,
Nobuyuki Sugii,
KAZUO TSUTSUI,
Kenji Natori,
takeo hattori,
HIROSHI IWAI.
Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices,
IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT,
2012.
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