論文

• Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yosihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara. The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene), Applied Physics Letters, Vol. 99, pp. 012901-1-3, July 2011.
• Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, Hiroshi Ishiwara. Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor, Applied Physics Letters, No. 96, 232903 1-3, May 2010.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. Ferroelectric Neuron Integrated Circuits using SrBi₂Ta₂O₉-Gate FET's and CMOS Schmitt-Trigger Oscillators, IEEE Transactions on Electron Devices, Vol. 47, No. 8, pp. 1630-1635, Aug. 2000.
• Sung-ming YOON, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi₂Ta₂O₉/Pt/Ti/SiO₂/Si Structure-Field Effect Transistor as a Synapse Device, Jpn. J. Appl. Phys., Vol. 39, No. 4B, pp. 2119-2124, Apr. 2000.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi₂Ta₂O₉)-Semiconductor (MFS) FETs, IEEE Electron Device Letters, Vol. 20, No. 10, pp. 526-528, Oct. 1999.
• Sung-ming Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara. An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi₂Ta₂O₉ thin films, IEEE Electron Device Lett., Vol. 20, No. 5, pp. 229-231, May 1999.

国際会議発表 (査読有り)

• G.-G. Lee, S.-M. Yoon, J.-W. Yoon, Y. Fujisaki, H. Ishiwara, E. Tokumitsu. Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE), The 17th International Display Workshops(IDW’10), Dec. 2010.
• GwangGeun Lee, Sung-ming Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs, 2010 fall meeting, Materials Research Society, Nov. 2010.
• GwangGeun Lee, Sung-ming Yoon, JooWon Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film, 2009 fall meeting, Materials Research Society, Nov. 2009.
• E.Tokumitsu, N.Kawaguchi, S.M.Yoon. Flexible Logic-Gate Using Ferroelectric Films, 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea, pp. 223-228, July 2001.

国内会議発表 (査読有り)

• Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, Yosihisa Fujisaki, Hiroshi Ishiwara, Eisuke Tokumitsu. Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer, 第７１回応用物理学会学術講演会, Sept. 2010.
• Gwang-Geun Lee, Sung-Min Yoon, Joo-Won Yoon, 藤崎芳久, 石原宏, 徳光永輔. 有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価, 信学技報、SDM2010-16、OME2010-16(2010-04), 社団法人電子情報通信学会, Vol. 110, No. 15, pp. 71-75, Apr. 2010.
• Sung-ming YOON, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi₂Ta₂O₉)/semiconductor field effect transisitor (MFSFET), Jpn. J. Appl. Phys., Vol. 38-1, No. 4B, pp. 2289-2293, Jan. 1999.

国内会議発表 (査読なし・不明)

• E.Tokumitsu, N.Kawaguchi, S.M.Yoon. Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor, Ext. Abst. 20th Electronic Materials Symp., Nara, Japan, pp. 41-42, June 2001.
• Sung-ming YOON, Yuji KURITA, Eisuke TOKUMITSU, Hiroshi ISHIWARA. Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors, Japanese Journal Applied Physics, Vol. 37, No. 3B, pp. 1110-1115, Mar. 1998.

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