論文

• Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Q. Zhang, Toshio Kamiya. Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate, ACS Appl. Electron. Mater., Vol. 4, pp. 2026, Apr. 2022.
• Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors, INORG. CHEM., 61, 6650−6659, Apr. 2022.
• Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono. Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride, ACS Appl. Mater. Interfaces, vol. 11, p. 35132-35137, Aug. 2019.
• Hironao Miyamoto, Kosuke Matsuzaki, Akira Yamaguchi, Masahiro Miyauchi. Visible-light-active photoelectrochemical Z-scheme system based on Top 5 Clarke-number elements, ACS Appl. Energy Mater., Vol. 1, pp. 5954-5959, Dec. 2018.
• Kazutaka Osako, Kosuke Matsuzaki, Tomofumi Susaki, Shigenori Ueda, Ge Yin, Akira Yamaguchi, HIDEO HOSONO, Masahiro Miyauchi. Direct observation of interfacial Charge transfer between rutile TiO2 and ultrathin CuOx film by visible-light illumination and its application for efficient photocatalysis, ChemCatChem, Vol. 53, pp. 3666-3670, Sept. 2018.
• Kosuke Matsuzaki, Kou Harada, Yu Kumagai, Shogo Koshiya, Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba, Hideo Hosono. High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design, Adv. Mater., Vol. 30, pp. 1801968, June 2018.

国際会議発表 (査読有り)

• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Transport properties of Zn3N2 investigated by ionic liquid gated electric-double-layer transistors, Materials Research Meeting 2021, Dec. 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya. Fabrication of Zn3N2 electric double layer transistor by ionic liquid gating, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.

国際会議発表 (査読なし・不明)

• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Masahiro Miyauchi, Kazutaka Osako, Kosuke Matsuzaki, Tomofumi Susaki, Akira Yamaguchi, HIDEO HOSONO. Direct Observation of Interfacial Excitation between Ultrathin CuO Film and Rutile TiO2 and Its Application for Environmental Remediation, Photocatalysis 2 & SIEMME'23, Dec. 2017.

国内会議発表 (査読なし・不明)

• 渡邉 脩人, 白石 明浩, ホ シンイ, 片瀬 貴義, 井手 啓介, 松崎 功佑, 平松 秀典, 細野 秀雄, 神谷 利夫. 層状結晶半導体SrTiN2の高純度試料合成と光電子輸送特性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 松崎功佑, 片瀬貴義, 細野 秀雄. 窒化銅薄膜をチャネルに用いたアンバイポーラ型トランジスタの作製, 第66回応用物理学会春季学術講演会, Mar. 2019.

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