Journal Paper

• Hayato Yoshida, Yusaku Shiotsu, Daiki Kitagata, Shuichiro Yamamoto, Satoshi Sugahara. Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches, IEEE Open Journal of Circuits and Systems, Vol. 2, pp. 520-533, Aug. 2021.

Domestic Conference (Not reviewed / Unknown)

• Yusaku Shiotsu, Hayato Yoshida, Shuichiro Yamamoto, SATOSHI SUGAHARA. ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能, LSIとシステムのワークショップ2021, May 2021.
• Takumi Hara, Hayato Yoshida, Yusaku Shiotsu, Shuichiro Yamamoto, SATOSHI SUGAHARA. ニアスレッショルド電圧動作ULVR-SRAMセルの設計, 第68回応用物理学会春季学術講演会, Mar. 2021.
• Hayato Yoshida, Yusaku Shiotsu, Shuichiro Yamamoto, SATOSHI SUGAHARA. ULVR-SRAMを用いたキャッシュのパワーゲーティング性能, 第68回応用物理学会春季学術講演会, Mar. 2021.

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