Journal Paper

• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB06-1-6, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.

International Conference (Not reviewed / Unknown)

• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.

Patent

• Shun-ichiro OHMI. 半導体装置. Patent. Published. 国立大学法人東京工業大学. 2020/09/23. 特願2020-158828. 2022/04/04. 特開2022-052432. 2022.

[ Save as BibTeX ]    [ Paper, Presentations, Books, Others, Degrees: Save as CSV ]    [ Patents: Save as CSV ]