Journal Paper

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Volume 63, Number 6, 066503, June 2024.  Official location  
• Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 4, 04SP31, Apr. 2024.  Official location  

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