Journal Paper

• Junya Denda, Kazuya Uryu, Keita Suda, Masahiro Watanabe. Resistance switching memory characteristics of Si/CaF₂/CdF₂/CaF₂/Si resonant-tunneling quantum-well structures, Appl. Phys. Express, 7, 044103-1-044103-4, Mar. 2014.

Domestic Conference (Not reviewed / Unknown)

• M. Mochizuki, H. Kaneko, K. Suda, M. Watanabe. Increase of electroluminescence from Si/CaF₂/CdF₂ intersubband transition laser structures using CdF₂ extraction layer, The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 14-068, Sept. 2014.
• K. Suda, Y. Kuwata, M. Watanabe. Analysis of Current Voltage Characteristics of Si/CaF₂/CdF₂ RTD, The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 14-067, Sept. 2014.
• Yuuya Kuwata, Keita Suda, Junya Denda, Yuuta Koshita, Masahiro WATANABE. Pulsed operation of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111), The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-1, 14-068, Mar. 2014.
• K. Suda, J. Denda, Y. Kuwata, Y. Koshita, M. Watanabe. Tunneling current measurement of Al/CaF₂/Si MIS structures, The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-2, 14-069, Mar. 2014.
• Y. Koshita, K. Suda, Y. Kuwata, J. Denda, M. Watanabe. High-peak-current-density resistance switching characteristics of Si/CaF₂ resonant-tunneling quantum-well structures, The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-3, 14-070, Mar. 2014.

Other Publication

• MASAHIRO WATANABE. ナノデバイスの機能設計と超高真空技術～新原理不揮発メモリ素子の探索的研究を例として～, 真空ジャーナル, No. 148, pp. 10-15, Apr. 2014.
• MASAHIRO WATANABE. Metal/insulator heterostructure electron devices, A monthly publication of the Jpn. Soc. of Appl. Phys.,, Vol. 63, No. 2, pp. 124-131, Feb. 2014.

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