Journal Paper

• An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima. Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma, Japanese Journal of Applied Physics, Volume 63, Number 6, 066503, June 2024.  Official location  
• Gen Nakada, Yoshiharu Kihara, Akira Yasui, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 5, 05SP14, May 2024.
• Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, Mitani Yuichiro, Kuniyuki KAKUSHIMA, Hiroshi Nohira. Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES, Apr. 2024.
• Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kuniyuki KAKUSHIMA. Identification of compressive strain in thin ferroelectric Al1–xScxN films by Raman spectroscopy, Japanese Journal of Applied Physics, Volume 63, Number 4, 04SP31, Apr. 2024.  Official location  

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