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Publication List - Takamasa Kawanago 2011 (6 / 94 entries)
Journal Paper
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Miyuki Kouda,
Takamasa Kawanago,
Ahmet Parhat,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices,
Journal of Vacuum Science and Technology B,
Vol. 29,
No. 6,
pp. 062202-1-4,
Nov. 2011.
International Conference (Reviewed)
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Ahmet Parhat,
来山大祐,
金田翼,
鈴木 拓也,
Tomotsune Koyanagi,
Miyuki Kouda,
マイマイティ マイマイティレャアティ,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm,
CSTIC2011,
2011.
International Conference (Not reviewed / Unknown)
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Takamasa Kawanago,
鈴木 拓也,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
An effective process for oxygen defect suppression for La-based oxide gate dielectric,
Taiwan-Japan Workshop on “Nano Devices”,
2011.
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Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation,
CSTIC2011,
2011.
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Ahmet Parhat,
来山大祐,
金田翼,
鈴木 拓也,
Tomotsune Koyanagi,
Miyuki Kouda,
マイマイティ マイマイティレャアティ,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High –k Gate Stacks,
,219th ECS Meeting,
2011.
Domestic Conference (Not reviewed / Unknown)
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田中 祐樹,
Takamasa Kawanago,
Kuniyuki KAKUSHIMA,
Ahmet Parhat,
KAZUO TSUTSUI,
西山彰,
Nobuyuki Sugii,
KENJI NATORI,
takeo hattori,
HIROSHI IWAI.
シリコン基板上に堆積したナノカーボン薄膜への高温短時間アニーリングの影響,
第72回応用物理学会学術講演会,
2011.
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