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金正煥 2019年 研究業績一覧 (24件 / 108件)
論文
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Seong Gon Park,
Kyu Hyoung Lee,
Jae-Hoon Lee,
Geukchan Bang,
Junghwan Kim,
Hee Jung Park,
Min Suk Oh,
Suyoun Lee,
Young-Hoon Kim,
Young-Min Kim,
Hideo Hosono,
Joonho Bang,
Kimoon Lee.
Improved polaronic transport under a strong Mott-Hubbard interaction in Cu-substituted NiO,
Inorganic Chemistry Frontiers,
Nov. 2019.
公式リンク
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Taehwan Jun,
Taketo Handa,
Kihyung Sim,
Soshi Iimura,
Masato Sasase,
Junghwan Kim,
Yoshihiko Kanemitsu,
Hideo Hosono.
One-step solution synthesis of white-light emitting films via dimensionality control of the Cs–Cu–I system,
APL Materials,
AIP,
Vol. 7,
p. 111113,
Nov. 2019.
公式リンク
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Jiazhen Sheng,
TaeHyun Hong,
Hyun-Mo Lee,
KyoungRok Kim,
Masato Sasase,
Junghwan Kim,
Hideo Hosono,
Jin-Seong Park.
Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD,
ACS applied materials & interfaces,
American Chemical Society (ACS),
Vol. 11,
No. 43,
pp. 40300-10309,
Oct. 2019.
公式リンク
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Kihyung Sim,
Taehwan Jun,
Joonho Bang,
Hayato Kamioka,
Junghwan Kim,
Hidenori Hiramatsu,
Hideo Hosono.
Performance boosting strategy for perovskite light-emitting diodes,
Applied Physics Reviews,
American Institute of Physics (AIP),
Vol. 6,
p. 031402,
July 2019.
公式リンク
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Keisuke Ide,
Yuki Futakado,
Naoto Watanabe,
Junghwan Kim,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Transition Metal‐Doped Amorphous Oxide Semiconductor Thin‐Film Phosphor, Chromium‐Doped Amorphous Gallium Oxide,
physica status solidi (a),
Vol. 216,
no. 5,
p. 1800198,
Mar. 2019.
公式リンク
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Naoto Watanabe,
Keisuke Ide,
Junghwan Kim,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature,
physica status solidi (a),
Vol. 216,
No. 5,
p. 1700833,
Mar. 2019.
公式リンク
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Junghwan Kim,
Joonho Bang,
Nobuhiro Nakamura,
Hideo Hosono.
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors,
APL Materials,
AIP,
Vol. 7,
No. 2,
p. 022501,
Feb. 2019.
公式リンク
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Hiroshi Mizoguchi,
Sang-Won Park,
Kazuhisa Kishida,
Masaaki Kitano,
Junghwan Kim,
Masato Sasase,
Takashi Honda,
Kazutaka Ikeda,
Toshiya Otomo,
Hideo Hosono.
Zeolitic Intermetallics: LnNiSi (Ln = La–Nd),
Journal of the American Chemical,
American Chemical Society,
Vol. 141,
No. 8,
pp. 3376–3379,
Feb. 2019.
公式リンク
国際会議発表 (査読有り)
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Junghwan Kim,
Kihyung Sim,
Hideo Hosono.
Realization of High-Performance Perovskite LEDs using a Novel Device Architecture,
iLIM-4,
Oct. 2019.
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Junghwan Kim,
Kihyung Sim,
Hideo Hosono.
Dimensionality Issue of Recent Halide Perovskites and Strategy for High Performance Perovskite LEDs,
TOEO-11,
Oct. 2019.
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Junghwan Kim,
Yu-Shien Shiah,
Joonho Bang,
Katsumi Abe,
Hideo Hosono.
Trade-off Relation between Mobility and Reliability in Oxide TFTs: Possible Origins and Experimental Demonstration,
International Meeting on Information Display (IMID),
Aug. 2019.
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Yu-Shien Shiah,
Joonho Bang,
Katsumi Abe,
Junghwan Kim,
Hideo Hosono.
NBTS-free Oxide TFTs with High Mobility of 40 cm2/Vs: A Possible Origin for NBTS Instability,
Society for Information Display (SID),
SID international symposium digest of technical papers,
pp. 1349-1350,
May 2019.
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Taehwan Jun,
Kihyung Sim,
Soshi Iimura,
Masato Sasase,
Hayato Kamioka,
Junghwan Kim,
Hideo Hosono.
Pb-free Blue-emitting 0D Cs3Cu2I5 with High PLQY of ~90%,
Society for Information Display (SID),
SID international symposium digest of technical papers,
pp. 1176-1178,
May 2019.
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Junghwan Kim,
Yu-Shien Shiah,
Joonho Bang,
Katsumi Abe,
Hideo Hosono.
Stability Issues of High-mobility Oxide TFTs,
International Thin-Film Transistor Conference (ITC) 2019,
The Abstracts of the 15th ITC,
p. 36,
Feb. 2019.
国内会議発表 (査読有り)
国際会議発表 (査読なし・不明)
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Naoto Watanabe,
Keisuke Ide,
Takayoshi Katase,
Junghwan Kim,
Shigenori Ueda,
Koji Horiba,
Hiroshi Kumigashira,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O,
Materials Research Meeting 2019,
Dec. 2019.
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Keisuke Ide,
Yuki Futakado,
Naoto Watanabe,
Junghwan Kim,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide,
The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11),
July 2019.
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Naoto Watanabe,
Keisuke Ide,
Takayoshi Katase,
Junghwan Kim,
Shigenori Ueda,
Koji Horiba,
Hiroshi Kumigashira,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor,
The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11),
July 2019.
国内会議発表 (査読なし・不明)
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井手啓介,
金正煥,
片瀬貴義,
細野秀雄,
神谷利夫.
アモルファス酸化物半導体を用いた新規デバイスの開拓,
薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」,
Nov. 2019.
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井手啓介,
渡邉脩人,
片瀬貴義,
笹瀬雅人,
金正煥,
上田茂典,
堀場弘司,
組頭広志,
平松秀典,
細野秀雄,
神谷利夫.
希土類添加アモルファス酸化物蛍光体薄膜の作製と発光素子への応用,
日本セラミックス協会 第39回電子材料研究討論会,
Nov. 2019.
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渡邉脩人,
井手啓介,
片瀬貴義,
笹瀬雅人,
戸田喜丈,
金正煥,
上田茂典,
堀場弘司,
組頭広志,
平松秀典,
細野秀雄,
神谷利夫.
アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製,
第66回応用物理学会春季学術講演会,
Mar. 2019.
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西間木祐紀,
井手啓介,
渡邉脩人,
金正煥,
片瀬貴義,
平松秀典,
細野秀雄,
神谷利夫.
アモルファス酸化物半導体薄膜トランジスタの希土類添加効果,
第57回セラミックス基礎科学討論会,
Jan. 2019.
特許など
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細野秀雄,
金正煥,
雲見日出也.
光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法.
特許.
登録.
国立大学法人東京工業大学.
2019/06/14.
特願2020-528761.
2021/09/24.
再表2020/008839.
特許第7181641号.
2022/11/22
2022.
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細野秀雄,
金正煥,
中村 伸宏,
渡邉 暁 ,
宮川 直通 .
化合物半導体の量子ドットを含む膜.
特許.
登録.
国立大学法人東京工業大学, AGC株式会社.
2018/08/17.
特願2018-153628.
2019/03/14.
特開2019-041104.
特許第7073981号.
2022/05/16
2022.
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細野秀雄,
神谷利夫,
雲見日出也,
金正煥,
中村 伸宏,
渡邉 暁,
宮川 直通.
酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体.
特許.
登録.
国立大学法人東京工業大学, AGC株式会社.
2017/02/23.
特願2018-503092.
2019/01/10.
再表2017/150351.
特許第7130209号.
2022/08/26
2022.
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