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一ノ瀬大地 2019年 研究業績一覧 (9件 / 76件)
論文
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Tomoya Sato,
Takanor Kiguchi,
Toyohiko Konno,
Junichi Kimura,
Daichi Ichinose,
Takanori Mimura,
Hiroshi Funakubo,
Kiyoshi Uchiyama.
Growth of (110)-one-axis-oriented perovskite-type oxide thin films with local epitaxy on (111)SrTiO3 single crystal substrates,
Jpn. J. Appl. Phys.,
Vol. 58,
pp. SLLB01,
Aug. 2019.
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Lu Yo,
Yang Zhang,
Shuang Zhou,
Apoorva Chaturvedi,
Samuel A. Morris,
Fucai Liu,
Lei Chang,
Daichi Ichinose,
Hiroshi Funakubo,
Weijin Hu,
Tom Wu,
Zheng Liu,
Shuai Dong,
Junling Wang.
Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric,
Science Advances,
Vol. 5,
No. 4,
pp. eaav3780,
Apr. 2019.
国際会議発表 (査読なし・不明)
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Samuel Alexander Morris,
Lu You,
Apoorva Chaturvedi,
Yang Zhang,
Shaung Zhou,
Fucai Liu,
Lei Chang,
Daichi Ichinose,
Hiroshi Funakubo,
Weijin Hu,
Tom Wu,
Zheng Liu,
Shuai Dong,
Junling Wang.
The Crystallographic Origin of Giant Negative Piezoelectricity in a Layered Ferroelectric,
ICMAT 2019 (10th International Conference on Materials for Advanced Technologies),
June 2019.
国内会議発表 (査読なし・不明)
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井上 英久,
一ノ瀬大地,
清水荘雄,
舟窪浩.
組成相境界近傍組成を有するPZT膜の電界下X線回折測定,
第66回応用物理学会春季学術講演会,
Mar. 2019.
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井上英久,
一ノ瀬大地,
清水荘雄,
舟窪浩.
組成相境界近傍組成のPZT膜のMOCVD合成とその圧電性評価,
第57回セラミックス基礎科学討論会,
Jan. 2019.
学位論文
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Studies on effect of stress and film thickness on domain structure in (100)/(001)-oriented epitaxial tetragonal Pb(Zr,Ti)O 3 films,
Thesis,
Doctor (Engineering),
Tokyo Institute of Technology,
2019/03/26,
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Studies on effect of stress and film thickness on domain structure in (100)/(001)-oriented epitaxial tetragonal Pb(Zr,Ti)O 3 films,
Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2019/03/26,
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Studies on effect of stress and film thickness on domain structure in (100)/(001)-oriented epitaxial tetragonal Pb(Zr,Ti)O 3 films,
Exam Summary,
Doctor (Engineering),
Tokyo Institute of Technology,
2019/03/26,
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Studies on effect of stress and film thickness on domain structure in (100)/(001)-oriented epitaxial tetragonal Pb(Zr,Ti)O 3 films,
Outline,
Doctor (Engineering),
Tokyo Institute of Technology,
2019/03/26,
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