論文

• Noboru Yamaguchi, Ralph Müller, Christian Reichel b, Jan Benick, Shinsuke Miyajima. Plasma immersion ion implantation for tunnel oxide passivated contact in silicon solar cell, Solar Energy Materials and Solar Cells, Volume 268, 112730, Feb. 2024.  公式リンク  
  
• Noboru Yamaguchi, Shasha Li, Shinsuke Miyajima. Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique, Japanese Journal of Applied Physics, 62, SK1024, Apr. 2023.  公式リンク  
  

国際会議発表 (査読有り)

• Shasha Li, Koki Omori, Yasushi Kawaguchi, Noboru Yamaguchi, Shinsuke Miyajima. (Tu2-P31-14) High-Quality Tunnel Oxide Passivated Contact Fabricated Using Sputtered Amorphous Silicon and Spin-On Doping, The 35th International Photovoltaic Science and Engineering Conference (PVSEC-35), Nov. 2024.
• Noboru Yamaguchi, Ralph Müller, Christian Reichel, Jan Benick, Shinsuke Miyajima. (Area5 5TuO7-5) Application of plasma immersion ion implantation technics to TOPCon solar cells, The 34th International Photovoltaic Science and Engineering Conference (PVSEC-34), Nov. 2023.  公式リンク  
  
• Noboru Yamaguchi, Shinsuke Miyajima. Evaluation of passivation layer for TOPCon formed by sputtering and ion implantation (WeO-31g-07]), 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), Nov. 2022.

国内会議発表 (査読なし・不明)

• 山口 昇, Li Shasha, 宮島 晋介. [25a-P05-4] スパッタおよびイオン注入を用いた高品質(τeff > 10 ms) TOPCon構造の作製, 2024年第71回応用物理学会春季学術講演会, Mar. 2024.  公式リンク  
  
• 山口 昇, 宮島 晋介. スパッタ法およびイオン注入法にて形成したTOPCon構造の評価（20p-C101-6）, 第83回 応用物理学会秋季学術講演会, Sept. 2022.

学位論文

• Passivating contacts for high efficiency silicon solar cells fabricated by using ion implantation and sputtered amorphous silicon,  Thesis,  Tokyo Institute of Technology, 
• Passivating contacts for high efficiency silicon solar cells fabricated by using ion implantation and sputtered amorphous silicon,  Outline,  Tokyo Institute of Technology, 
• Passivating contacts for high efficiency silicon solar cells fabricated by using ion implantation and sputtered amorphous silicon,  Summary,  Tokyo Institute of Technology, 

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