論文

• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Low-Temperature Si Epitaxial Layer with Heavily Phosphorous and Boron Doping Using Photoepitaxy, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 137, No. 6, pp. 1981-1987, June 1990.
• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Continuous Growth of Heavily Doped p+-n+ Si Epitaxial Layer Using Low-Temperature Photoepitaxy, Applied Physics Letters, American Institute of Physics, Vol. 55, No. 9, pp. 879-881, Aug. 1989.

国際会議発表 (査読有り)

• Tatsuya Yamazaki, Hiroshi Minakata, Takashi Ito. Abrupt and Defect-free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping, Ext. Abs. of 2lst Conf. on SSDM, Ext. Abs. of 2lst Conf. on SSDM, pp. 61-62, 1989.

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