論文

• Shi Yuhao, Shiah Yu-Shien, Sim Kihyung, Sasase Masato, Kim Junghwan, Hosono Hideo. High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx, Nov. 2022.
• Junghwan Kim, Yu-Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono. High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure, Advanced Science, Dec. 2021.  公式リンク  
  
• Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abe, Shigenori Ueda , Masato Sasase, Junghwan Kim , Hideo Hosono. Mobility–stability trade-off in oxide thin-film transistors, Nature Electronics, Vol. 4, pp. 800-807, Nov. 2021.  公式リンク  
  
• Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono. Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs, IEEE Electron Device Letters, Vol. 42, pp. 1319 - 1322, July 2021.  公式リンク  
  
• Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong. High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film, ACS Applied Materials and Interfaces, ACS Publications, June 2021.  公式リンク  
  
• Tianping Ying, Tongxu Yu, Yu-Shien Shiah, Changhua Li, Jiang Li, Yanpeng Qi, Hideo Hosono. High-Entropy van der Waals Materials Formed from Mixed Metal Dichalcogenides, Halides, and Phosphorus Trisulfides, J. AM. CHEM. SOC., 143, 7042-7049, Apr. 2021.
• Xianzhe Liu, Jianhua Zhang, Yu-Shien Shiah, Junghwan Kim, Honglong Ning, Kuankuan Lu, Xiuhua Cao, Wei Xu, Rihui Yao, Junbiao Peng. Implementing Room-Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control, Advanced Materials Interfaces, Wiley, p. 2002193, Feb. 2021.  公式リンク  
  

国際会議発表 (査読有り)

• Junghwawn Kim, Yu-Shien Shiah, Katsumi Abe, Hideo Hosono, Junghwan Kim. How to Obtain both High Mobility and High Stability in Oxide TFTs?, IUMRS-ICA 2021, Oct. 2021.
• Junghwan Kim, Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Hideo Hosono. Trade-off Relation between Mobility and Reliability in Oxide TFTs: Possible Origins and Experimental Demonstration, International Meeting on Information Display (IMID), Aug. 2019.
• Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Junghwan Kim, Hideo Hosono. NBTS-free Oxide TFTs with High Mobility of 40 cm2/Vs: A Possible Origin for NBTS Instability, Society for Information Display (SID), SID international symposium digest of technical papers, pp. 1349-1350, May 2019.
• Junghwan Kim, Yu-Shien Shiah, Joonho Bang, Katsumi Abe, Hideo Hosono. Stability Issues of High-mobility Oxide TFTs, International Thin-Film Transistor Conference (ITC) 2019, The Abstracts of the 15th ITC, p. 36, Feb. 2019.

学位論文

• High Performance Oxide and Iodide TFTs and CMOS,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/09/24,   
• High Performance Oxide and Iodide TFTs and CMOS,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/09/24, 
• High Performance Oxide and Iodide TFTs and CMOS,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/09/24,   
• High Performance Oxide and Iodide TFTs and CMOS,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/09/24,   

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