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Publication List - Takayuki Iwasaki 2012 (16 / 463 entries)
Journal Paper
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Kosuke Tahara,
Takayuki Iwasaki,
Mutsuko Hatano.
Effect of radical fluorination on mono- and bi-layer graphene in Ar/F2 plasma,
Appl. Phys. Lett,
101,
16,
163105,
Oct. 2012.
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Yuto Hoshino,
H. Kato,
T.Makino,
M. Ogura,
Takayuki Iwasaki,
Mutsuko Hatano,
S. Yamasaki.
Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+ diamond,
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
209,
9,
1761-1764,
Sept. 2012.
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Takayuki Iwasaki,
Yuto Hoshino,
Kouhei Tsuzuki,
Hiromitsu Kato,
Toshiharu Makino,
Masahiko Ogura,
Daisuke Takeuchi,
Tsubasa Matsumoto,
Hideyo Okushi,
Satoshi Yamasaki,
Mutsuko Hatano.
Diamond Junction Field-Effect Transistors with Slectively Grown n+-Side Gates,
Appl. Phys. Express,
5,
091301,
Sept. 2012.
International Conference (Reviewed)
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Kosuke Tahara,
Takayuki Iwasaki,
Akihiro Matsutani,
Satoko Furuyama,
Yasuhide Ohno,
Kazuhiko Matsumono,
Mutsuko Hatano.
Fluorination of Mono- and Bi-layer Graphene by Ar/F2 Plasma,
2012 MRS Fall Meeting,
Nov. 2012.
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Akihiro Matsutani,
Kosuke Tahara,
Takayuki Iwasaki,
Mutsuko Hatano.
Fluorination Process of Graphene using Ar/F2 Plasma,
MNC 2012, 25th International Microprocesses and Nanotechnology Conference,
Oct. 2012.
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Takayuki Iwasaki,
Yuto Hoshino,
Kouhei Tsuzuki,
H. Kato,
T. Makino,
M. Ogura,
D. Takeuchi,
T. Matsumoto,
H. Okushi,
S. Yamasaki,
Mutsuko Hatano.
Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices,
2012 IEEE International Electron Devices Meeting (IEDM)(2012),
2012.
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Takayuki Iwasaki,
Yuto Hoshino,
H. Kato,
T. Makino,
M. Ogura,
D. Takeuchi,
T. Matsumoto,
S. Yamasaki,
Mutsuko Hatano.
Diamond Junction Field Effect Transistors with Selectively Grown n+ Gates,
International Conference on Diamond and Carbon Materials (2012),
2012.
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Yuto Hoshino,
Takayuki Iwasaki,
Kouhei Tsuzuki,
H. Kato,
T. Makino,
M. Ogura,
D. Takeuchi,
T. Matsumoto,
S. Yamasaki,
Mutsuko Hatano.
Diamond Lateral p-n Diodes and JFETs by Selective Growth of n+ Diamond,
2012 International Conference on Solid State Devices and Materials(SSDM 2012),
2012.
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Yuto Hoshino,
H.Kato,
T. Makino,
M.Ogura,
Takayuki Iwasaki,
Mutsuko Hatano,
S. Yamasaki.
Electrical Properties of Lateral p-n Junction Diode Fabricated by Selective Growth of n+ Diamond,
Hasselt Diamond Workshop 2012, 17th SBDD,
2012.
Domestic Conference (Reviewed)
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Yuto Hoshino,
Kouhei Tsuzuki,
加藤宙光,
牧野俊晴,
小倉政彦,
Takayuki Iwasaki,
竹内大輔,
大串秀世,
山崎聡,
Mutsuko Hatano.
n+選択成長を利用したダイヤモンド接合型電界効果トランジスタの試作とデバイス特性の解析,
第26回ダイヤモンドシンポジウム,
Nov. 2012.
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Kouhei Tsuzuki,
加藤宙光,
牧野俊晴,
小倉政彦,
竹内大輔,
大串秀世,
Yuto Hoshino,
Takayuki Iwasaki,
山崎聡,
Mutsuko Hatano.
n型ダイヤモンド半導体の選択成長法を用いた横型接合FET,
第73回秋季応用物理学会学術講演会,
Sept. 2012.
Domestic Conference (Not reviewed / Unknown)
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Kosuke Tahara,
Takayuki Iwasaki,
akihiro matsutani,
Satoko Furuyama,
大野恭秀,
松本和彦,
Mutsuko Hatano.
フッ化グラフェンのキャリア輸送特性,
第73回秋季応用物理学会学術講演会,
Sept. 2012.
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Kouhei Tsuzuki,
加藤宙光,
牧野俊晴,
小倉政彦,
Yuto Hoshino,
Takayuki Iwasaki,
山崎聡,
Mutsuko Hatano.
n型ダイヤモンド半導体の選択成長を適用した横型p-nダイオード,
第59回応用物理学関係連合講演会,
Mar. 2012.
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Kosuke Tahara,
Takayuki Iwasaki,
akihiro matsutani,
Mutsuko Hatano.
Ar/F2プラズマによるフッ化グラフェンの作製,
第59回応用物理学関係連合講演会,
Mar. 2012.
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Masayuki Kamiya,
Takayuki Iwasaki,
Mutsuko Hatano.
3C-SiC半導体による水の光電気分解,
第59回応用物理学関係連合講演会,
Mar. 2012.
Patent
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