論文

• Pham Van Thuan, Ho Hoang Huy, Wentao Li, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai. Large spin Hall effect in 300 °C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates, Applied Physics Letters, Vol. 128, pp. 182403, May 2026.

国際会議発表 (査読有り)

• Pham Van Thuan, Ho Hoang Huy, Pham Nam Hai. Manufactorable BiSb top structure for ultrafast and ultralow power SOT-MRAM, 2026 IEEE Magnetics Society Summer School, June 2026.
• Ho Hoang Huy, Li Wentao, Pham Van Thuan, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai. Large Spin Hall Angle in Highly-Textured Sputtered BiSb (012) Topological Insulator on Si/SiO2 Substrates Enabled by Buffer/Seed Stack, Intermag 2026, Apr. 2026.
• Pham Van Thuan, Ho Hoang Huy, Li Wentao, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai. Large spin Hall effect in 300C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates, Intermag 2026, Apr. 2026.

国内会議発表 (査読なし・不明)

• Pham Van Thuan, Ho Hoang Huy, Pham Nam Hai. Manufacturable Top-BiSb SOT-MRAM Using a Conductive RuOx Interlayer, The 87th JSAP Autumn Meeting 2026, Sept. 2026.
• Wentao Li, Hoang Huy Ho, Xiaokun Yan, Pham Van Thuan, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai. Large Spin-Orbit Torque Induced by Highly Textured BiSb(012) Topological Insulator Deposited on Si/SiO2 Substrates Using Oxide Buffer/Seed Stack, The 73th JSAP Spring meeting 2026, Mar. 2026.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]