Journal Paper

• K. Ohsawa, A. Kato, T. Kanazawa, E. Uehara, Y. Miyamoto. Channel thickness dependence on InGaAs MOSFET with InP source for high current density, IEICE Electronics Express, vol. 11, No. 14, pp. 1-5, July 2014.

International Conference (Reviewed)

• Y. Mishima, T. Kanazawa, H. Kinoshita, E. Uehara, Y. Miyamoto. InGaAs tri-gate MOSFETs with MOVPE regrown source/drain, 72nd Device Research Conference (DRC), June 2014.
• K. Ohsawa, A. Kato, T. Sagai, T. Kanazawa, E. Uehara, Y. Miyamoto. Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density, 10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), 2-9, pp. 19-20, Sept. 2013.
• A. Kato, T. Kanazawa, Eiji Uehara, Y. Yonai, Y. Miyamoto. Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate, 25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013), May 2013.

Domestic Conference (Not reviewed / Unknown)

• Yuichi Mishima, Toru Kanazawa, Haruki Kinoshita, Eiji Uehara, YASUYUKI MIYAMOTO. 再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET, 第61回春季応用 物理学会学術講演会, Mar. 2014.
• Toru Kanazawa, Yuichi Mishima, Haruki Kinoshita, Eiji Uehara, YASUYUKI MIYAMOTO. MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET, 電子情報通信学 会 電子デバイス研究会, IEICE technical report, Jan. 2014.
• Kazuto Ohsawa, atsushi kato, Takeru Sagai, Toru Kanazawa, Eiji Uehara, YASUYUKI MIYAMOTO. 高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性, 第74回秋季応用物理学会学術講演会, Sept. 2013.
• Takeru Sagai, Eiji Uehara, Kazuto Ohsawa, YASUYUKI MIYAMOTO. n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性, 2013年電子情報通信学会総合大会, Mar. 2013.

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