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Publication List - Eiji Uehara (8 entries)
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Journal Paper
International Conference (Reviewed)
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Y. Mishima,
T. Kanazawa,
H. Kinoshita,
E. Uehara,
Y. Miyamoto.
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain,
72nd Device Research Conference (DRC),
June 2014.
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K. Ohsawa,
A. Kato,
T. Sagai,
T. Kanazawa,
E. Uehara,
Y. Miyamoto.
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density,
10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013),
2-9,
pp. 19-20,
Sept. 2013.
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A. Kato,
T. Kanazawa,
Eiji Uehara,
Y. Yonai,
Y. Miyamoto.
Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate,
25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013),
May 2013.
Domestic Conference (Not reviewed / Unknown)
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Yuichi Mishima,
Toru Kanazawa,
Haruki Kinoshita,
Eiji Uehara,
YASUYUKI MIYAMOTO.
再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET,
第61回春季応用 物理学会学術講演会,
Mar. 2014.
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Toru Kanazawa,
Yuichi Mishima,
Haruki Kinoshita,
Eiji Uehara,
YASUYUKI MIYAMOTO.
MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET,
電子情報通信学 会 電子デバイス研究会,
IEICE technical report,
Jan. 2014.
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Kazuto Ohsawa,
atsushi kato,
Takeru Sagai,
Toru Kanazawa,
Eiji Uehara,
YASUYUKI MIYAMOTO.
高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性,
第74回秋季応用物理学会学術講演会,
Sept. 2013.
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Takeru Sagai,
Eiji Uehara,
Kazuto Ohsawa,
YASUYUKI MIYAMOTO.
n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性,
2013年電子情報通信学会総合大会,
Mar. 2013.
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