論文

• Y. Ito, S. Tamai, T. Hoshi, T. Gotow, Y. Miyamoto. Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers, JPN. J. APPL. PHYS., vol. 62, no. SC, SC1048, Feb. 2023.

国際会議発表 (査読有り)

• Y. Ito, S. Tamai, T. Hoshi, Y. Miyamoto. GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers, 2022 International Conference on Solid State Devices and Materials, Sept. 2022.

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