国際会議発表 (査読有り)

• Eisuke Tokumitsu, Isahaya Yamamura, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications, WoDiM 2012(17th Workshop on Dielectrics in Microelectronics), June 2012.
• Eisuke Tokumitsu, Akio Ishiguro, Hiroyuki Yamada, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani, Tatsuo Oomori. Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process, 2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), pp. 320, Sept. 2011.

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