論文

• E.Tokumitsu, Y.Takano, H.Shibata, H.Saiki. Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer, Journal of Microelectronic Engineering, Vol. 84, pp. 2018-2021, June 2007.
• Hirokazu Saiki, Eisuke Tokumitsu. Data Retention and Readout Degradation Propertics of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors, Jpn. J. Appl. Phys., Vol. 46, No. 1, pp. 261-266, Jan. 2007.
• Hirokazu Saiki, Syahhibul Azwar, Eisuke Tokumitsu. Fabrication of SBT-based Ferroelectric Thin Films for Low Voltage Operation of Ferroelectric-gate FET, Transactions of the Materials Research Society of Japan, Vol. 31[1], pp. 197-200, Jan. 2006.
• Hirokazu Saiki, Eisuke Tokumitsu. Ferroelectric Sprit-Gate-Feild-Effect-Transistors for Nonvolatile Memory Cell Array, IEICE Transactions on Electronics, Vol. E87-C, No. 10, pp. 1700-1705, Oct. 2004.

国際会議発表 (査読有り)

• Eisuke Tokumitsu, Syahhibul Azwar, Hirokazu Saiki. Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films, 19th International Symposium of Intergrated Ferroelectrics(ISIF2007), pp. 5-166P, May 2007.
• Eisuke Tokumitsu, Hirokazu Saiki. Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors, 19th International Symposium of Intergrated Ferroelectrics(ISIF2007), pp. 1-143P, May 2007.
• Hirokazu Saiki, Eisuke Tokumitsu. Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films, Materials Research Society Symp., Materials Research Society Symp. Proc., Vol. 784, pp. 485-490, July 2004.

国内会議発表 (査読有り)

• 高野 友一, 斎木博和, 柴田宏, 徳光永輔. 金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価, 第54回応用物理学関係連合講演会, No. 29a-SV-4, Mar. 2007.

学位論文

• 強誘電体ゲート電界効果トランジスタ用新規材料・デバイス構造に関する研究,  本文,  博士（工学）,  東京工業大学,  2007/03/26, 

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]