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Publication List - Shunsuke Ikeda 2011 (6 / 24 entries)
Journal Paper
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R. Terao,
T. Kanazawa,
S. Ikeda,
Y. Yonai,
A. Kato,
Y. Miyamoto.
InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm,
Applied Phys. Exp.,
The Japan Society of Applied Physics,
vol. 4,
no. 5,
054201,
Apr. 2011.
International Conference (Reviewed)
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T. Kanazawa,
R. Terao,
S. Ikeda,
Y. Miyamoto.
MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm,
23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011),
Sept. 2011.
Official location
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A. Kato,
T. Kanazawa,
S. Ikeda,
Y. Yonai,
YASUYUKI MIYAMOTO.
Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode,
2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD),
Sept. 2011.
Official location
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Yosiharu Yonai,
Toru Kanazawa,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO.
High Drain Current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with Shrinkage of Channel Length by InP Anisotropic Etching,
2011 IEEE International Electron Devices Meeting (IEDM 2011),
2011.
Domestic Conference (Not reviewed / Unknown)
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Shunsuke Ikeda,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性,
電子情報通信学会2011年ソサイエティ大会,
Sept. 2011.
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Toru Kanazawa,
Ryousuke Terao,
Yuutarou Yamaguchi,
Shunsuke Ikeda,
Yosiharu Yonai,
atsushi kato,
YASUYUKI MIYAMOTO.
裏面電極を有するⅢ-Ⅴ族量子井戸型チャネルMOSFET,
電子情報通信学会電子デバイス研究会,
Jan. 2011.
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