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Publication List - Shunsuke Ikeda 2012 (7 / 24 entries)
Journal Paper
International Conference (Reviewed)
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M. Kashiwano,
J. Hirai,
S. Ikeda,
M. Fujimatsu,
Y. Miyamoto.
High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa,
2012 International Conference on. Solid State Devices and Materials (SSDM 2012),
Sept. 2012.
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Jun Hirai,
Tomoki Kususaki,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO.
Vertical InGaAs MOSFET with HfO2 gate,
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2012),
2012.
Domestic Conference (Not reviewed / Unknown)
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Masashi Kashiwano,
Jun Hirai,
Shunsuke Ikeda,
Motohiko Fujimatsu,
YASUYUKI MIYAMOTO.
半導体ドレイン層及び狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化,
第 73 回応用物理学会学術講演会,
Sept. 2012.
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Masashi Kashiwano,
Jun Hirai,
Shunsuke Ikeda,
Motohiko Fujimatsu,
YASUYUKI MIYAMOTO.
半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化,
電子情報通信学会技術研究報告,
May 2012.
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Masashi Kashiwano,
Jun Hirai,
Shunsuke Ikeda,
Motohiko Fujimatsu,
YASUYUKI MIYAMOTO.
GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析,
電子情報通信学会2011年総合大会,
Mar. 2012.
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Yosiharu Yonai,
Toru Kanazawa,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO.
InPエッチング異方性による微細InGaAsチャネルMOSFET,
応用物理学会 2012年度春季大会,
Mar. 2012.
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